In response to the growing need of high-performance electric and electronic components applied to electric vehicles, 5G, and low-earth orbit satellites, the National Center for Instrumentation Research (NCIR), under the National Institutes of Applied Research (NIAR), collaborated with DEUVtek to develop a key technology-infrared nanosecond laser processing for silicon carbide (SiC) wafer grinding. This scientific breakthrough has enhanced the grinding rate and quality of SiC wafers, significantly reducing fabrication cost and material loss. It effectively addresses the industry’s urgent demand for high-efficiency and low-loss fabrication processes, paving the way for mass production of domestically developed compound semiconductor power components, and expanding the potential for future applications in electric vehicles, renewable energy, and information and communication technologies.
Silicon carbide (SiC), one of the most promising compound semiconductor materials, possesses exceptional properties such as high voltage tolerance, high thermal conductivity, and excellent chemical stability. It has replaced silicon wafers as the preferred material for key components in automotive power and drive systems, photovoltaic inverters, charging stations, and industrial control equipment.
However, due to the extremely high hardness of SiC, using it in the wafer fabrication process poses a challenge at the grinding stage. Traditional grinding methods may not achieve expected processing efficiency and quality. Not only are these methods time-consuming, but they can result in substantial material loss, wafer surface damage, or even wafer breakage. Overall, they are not productive and cost-effective.
To resolve the problem, NCIR integrated an infrared nanosecond laser system by leveraging its expertise in precision optics and advanced laser technologies. This led to the development of a laser grinding technology specifically designed for the mass production of SiC wafers. The new method reduces the grinding time per wafer from 3 hours to just 2 hours without causing wafer damage, and the wafer breakage rate reduced from 5% to 1%, vastly improving product yield. Moreover, this technology minimizes material loss and the cost of maintenance and consumables such as diamond grinding wheels, water, and oil- with consumable cost per wafer dropping from USD 23 to as low as USD 0.10. Furthermore, it helps mitigate reliance on diamond abrasives predominantly supplied by China, thereby enhancing supply chain resilience. Still another advantage of this technology is its ability to reduce the hardness of SiC wafers from approximately 3000 HV to 60 HV, greatly decreasing the time and cost required for subsequent processing.
The back-end processing of SiC wafers is widely regarded by the semiconductor industry as a major bottleneck to mass production. The NCIR developed laser grinding technology marks a significant breakthrough for Taiwan in the field of non-contact machining of hard materials. By courtesy of DEUVtek’s technology transfer and implementation, this innovation has become a key driver of advancing the mass production of SiC materials. It provides concrete support for Taiwan’s independent development of power semiconductor fabrication processes and fills a critical gap in the supply chain of the domestic power semiconductor industry. DEUVtek has partnered with the Czech branch of U.S. chip manufacturer ON Semiconductor Corporation to promote this equipment in Europe. NCIR will continue its collaboration with DEUVtek to commercialize this technology, with plans to extend its application to 8-inch SiC wafers and heterojunction devices. The technology also holds great potential for the precision processing of other hard materials, such as gallium nitride (GaN), ceramic substrates, and advanced packaging materials.
NCIR will continues to uphold its core mission of “introducing technology into industry, with application built on research” and deepen collaboration with industry partners, transforming more forward-looking technologies into competitive advantages that empower Taiwan’s industries to thrive in the international community.
Hardness is defined as the resistance to permanent deformation of a solid material. One common unit of hardness is the Vickers hardness, known as HV. Diamond is the hardest material in nature, with a hardness of approximately 10,000 HV. Silicon carbide (SiC) measures around 3,000 HV, while silicon is about 1,000 HV.
Date: 2025-06-24 Source: National Center for High-performance Computing